The thinner oxide layer means lower voltage requirements for initiating changes in cell value. The floating gate is separated from the control gate by a thin oxide layer. It is also composed of cells with two transistors. To configure an EEPROM chip, an electric field produced by the charge pump is applied locally to cells marked for modification. This charge pump can produce the necessary programming voltage. To eliminate the necessity of external programming, Perlegos and company made the insulating layer thinner and integrated an oscillator and capacitor circuit into the memory chip itself. However the archetypal EEPROM still had to be taken out of the computer or electronic device of which it was part if any reprogramming was necessary. Its development began in while Perlegos was still employed by Intel. Data stored in an EEPROM chip is permanent, at least until the user decides to erase and replace the information it contains. Thus, sections of data can be erased and replaced without needing to alter the rest of the chip's programming. The user can alter the value of certain cells without needing to erase the programming on other cells.
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